PART |
Description |
Maker |
ITH08F06G ITH08F06 ITH08F06B |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 14A I(C) | TO-252AA TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 14A I(C) | TO-220AB HIGH - SPEED POWERLINE N - CHANNEL IGBT
|
MITEL[Mitel Networks Corporation]
|
FGA25N120 FGA25N120AN FGA25N120ANTU |
Discrete, NPT IGBT TRANSISTOR,IGBT,N-CHAN,1.2KV V(BR)CES,25A
|
FAIRCHILD[Fairchild Semiconductor]
|
HGT1Y40N60B3D |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 40A I(C) | TO-264 70A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
|
FAIRCHILD[Fairchild Semiconductor]
|
IRG4RC10KD IRG4RC10 IRG4RC10KDTRR |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 5A I(C) | TO-252AA 晶体管| IGBT的|正陈| 600V的五(巴西)国际消费电子展| 5A条一(c)|52AA INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A) 600V UltraFast 8-25 kHz Copack IGBT in a D-Pak package
|
International Rectifier, Corp. IRF[International Rectifier]
|
CT20AS8 |
TRANSISTOR | IGBT | N-CHAN | 450V V(BR)CES | 130A I(C) | TO-252 晶体管| IGBT的|正陈| 450V五(巴西)国际消费电子展| 130A条一(c)|52
|
Mitsubishi Electric, Corp.
|
F8A06FF |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-220VAR 晶体管| IGBT的|正陈| 600V的五(巴西)国际消费电子展| 8A条一(c)|20VAR
|
Glenair, Inc.
|
GT8Q102SM |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 8A I(C) | TO-252VAR 晶体管| IGBT的|正陈| 1.2KV五(巴西)国际消费电子展| 8A条一(c)|52VAR
|
Panasonic Industrial Solutions
|
ITS18F03B |
TRANSISTOR | IGBT | N-CHAN | 300V V(BR)CES | 36A I(C) | TO-220AB 晶体管| IGBT的|正陈| 300V五(巴西)国际消费电子展|6A一(c)| TO - 220AB现有
|
Continental Device India, Ltd.
|
IXSK40N60BD1 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 75A I(C) | TO-264AA 晶体管| IGBT的|正陈| 600V的五(巴西)国际消费电子展| 75A条一(c)|64AA
|
IXYS, Corp.
|
HGT1S5N120BNDS HGT1S5N120BNDS9A |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 10A I(C) | TO-263AB 21A, 1200V, NPT Series N-Channel IGBTswith Anti-Parallel Hyperfast Diodes
|
Fairchild Semiconductor
|